IXTP10N60PM Datasheet, PDF (1/2 Pages) IXYS Corporation – PolarHV Power MOSFET

Preliminary Technical Information
PolarHV^TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTP 10N60PM
V=
DSS
I_D25 =
R_DS(on) ≤
600 V
5A
740 mΩ
Symbol
Test Conditions
OVERMOLDED TO-220
Maximum Ratings _{(IXTP...M) OUTLINE}
V
DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T
J
= 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T
C
= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
600
V
600
V
±30
V
±40
V
5
A
30
A
10
A
20
mJ
500
mJ
10
V/ns
G _DS
Isolated Tab
G = Gate
S = Source
D = Drain
50
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
Features
z _{Plastic overmolded tab for electrical}
isolation
z _{International standard package}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 100μA
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I
DSS
V =V
DS
DSS
V =0V
GS
T
J
=
125°C
5 μA
50 μA
R_DS(on)
V_GS = 10 V, I_D = 5 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
740 m Ω
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99450E(04/06)