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| IXTP01N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage MOSFET | |||
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High Voltage MOSFET
N-Channel, Depletion Mode
IXTP 01N100D
V = 1000 V
DSS
ID25 = 100 mA
= RDS(on) 110 â¦
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
I
DM
PD
TJ
TJM
Tstg
TL
Weight
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25°C;TJ = 25°C to 150°C
T
C
=
25°C,
pulse
width
limited
by
T
J
TC = 25°C
TA = 25°C
1.6 mm (0.063 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
100
mA
400
mA
25
W
1.1
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1
g
TO-220AB (IXTP)
GDS
D (TAB)
Features
l Normally ON mode
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Fast switching speed
Symbol
VDSS
VGS(off)
IGSS
I
DSS(off)
RDS(on)
ID(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = -10 V, ID = 25 µA
VDS = 25V, ID = 25 µA
1000
-2.5
V
-5 V
VGS = ±20 VDC, VDS = 0
±100 nA
V = V , V = -10 V
DS
DSS GS
T
J
=
25°C
TJ = 125°C
10 µA
250 µA
VGS = 0 V, ID = 50 mA Note 1
90 110 â¦
VGS = 0 V, VDS = 50V Note 1
250
mA
Applications
l Level shifting
l Triggers
l Solid state relays
l Currentregulators
© 2001 IXYS All rights reserved
98809A (12/01)
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