IXTN8N150L Datasheet, PDF (1/5 Pages) IXYS Corporation – Linear Power MOSFET w/Extended FBSOA

Linear Power MOSFET
w/Extended FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
IXTN8N150L
D
G
S
S
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
50/60 Hz, RMS, t = 1minute
I_ISOL ≤ 1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
Maximum Ratings
1500
V
1500
V
±30
V
±40
V
7.5
A
20
A
545
W
-55 to +150
°C
150
°C
-55 to +150
°C
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 250µA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
R_DS(on)
V_GS = 20V, I_D = 4A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1500
V
5.0
8.0 V
±200 nA
25 µA
500 µA
3.6 Ω
V_DSS
I_D25
R_DS(on)
= 1500V
= 7.5A
≤ 3.6Ω
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
S = Source
Features
z _{Designed for Linear Operations}
z _{International Standard Package}
z _{Molding Epoxies Meet UL94 V-0}
Flammability Classification
z _{Guaranteed FBSOA at 60ºC}
z _{miniBLOC with Aluminum Nitride}
Isolation
z _{Low RDS(on) HDMOS}TM _Process
z _{Rugged Polysilicon Gate Cell}
Structure
z _{Low Package Inductance}
Applications
z _{Programmable Loads}
z _{Current Regulators}
z _{DC-DC Convertors}
z _{Battery Chargers}
z _{DC Choppers}
z _{Temperature and Lighting Controls}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
© 2013 IXYS CORPORATION, All rights reserved
DS99815B(3/13)