IXTN62N50L Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Linear^TM Power MOSFET
w/Extended FBSOA
IXTN62N50L
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
50/60 Hz, RMS, t = 1minute
I_ISOL ≤ 1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
62
A
150
A
80
A
5
J
800
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
30
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 20V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
± 200 nA
50 μA
1 mA
100 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
500V
62A
100mΩ
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z _{International Standard Package}
z _{Low Intrinsic Gate Resistance}
z _{miniBLOC with Aluminum Nitride}
Isolation
z _{Fast Intrinsic Diode}
z _{Extended FBSOA}
z _{Avalanche Rated}
z _{Low RDS(ON) and QG}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Programmable Loads}
z _{DC-DC Converters}
z _{Current Regulators}
z _{Battery Chargers}
z _{DC Choppers}
z _{Temperature and Lighting}
Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS99812A(11/11)