IXTN60N50L2 Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

Preliminary Technical Information
Linear L2^TM Power
MOSFET
N-Channel Enhancement Mode
Extended FBSOA
IXTN60N50L2
V_DSS =
I_D25 =
≤ R_DS(on)
500V
53A
100mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
Mounting torque
Terminal Connection torque
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 30A Note 1
Maximum Ratings
500
V
500
V
±30
V
±40
V
53
A
150
A
60
A
3
J
735
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Characteristic Values
Min. Typ. Max.
500
V
2.5
4.5 V
±200 nA
50 μA
5 mA
100 mΩ
miniBLOC, SOT-227
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal S can be used as the
source terminal or the Kelvin source (gate
return) terminal.
Features
• Designed for linear operation
• International standard package
• Molding epoxy meets UL94 V-0
flammability classification
• miniBLOC with Aluminium nitride
isolation
Applications
• Programmable loads
• Current regulators
• DC-DC converters
• Battery chargers
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2008 IXYS CORPORATION, All rights reserved
DS100086(12/08)