IXTN600N04T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 GigaMOS Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

TrenchT2^TM GigaMOS^TM
Power MOSFET
IXTN600N04T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C (Chip Capability)
External Lead Current Limit
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
40
V
40
V
±20
V
600
A
200
A
1800
A
200
A
3
J
940
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 100A, Note 1
Characteristic Values
Min.
Typ. Max.
40
V
1.5
3.5 V
±200 nA
10 μA
1 mA
1.3 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
40V
600A
1.3mΩ
miniBLOC, SOT-227
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{175°C Operating Temperature}
z _{Isolation Voltage 2500 V~}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters and Off-Line UPS}
z _{Primary-Side Switch}
z _{High Speed Power Switching}
Applications
© 2012 IXYS CORPORATION, All Rights Reserved
DS100172B(10/12)