IXTN40P50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarP Power MOSFET

PolarP^TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTN40P50P
D
G
S
S
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
- 500
V
- 500
V
±20
V
±30
V
- 40
A
- 120
A
- 40
A
3.5
J
10
890
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
V/ns
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = -1mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
- 500
V
- 2.0
- 4.0 V
±100 nA
- 50 μA
- 250 μA
230 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
- 500V
- 40A
230mΩ
miniBLOC, SOT-227
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal at miniBLOC
can be used as Main or Kelvin Source.
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Rugged PolarP}TM _Process
z _{Avalanche Rated}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switches}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
© 2012 IXYS CORPORATION, All Rights Reserved
DS99936C(12/12)