IXTN200N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMVTM Power MOSFET

Preliminary Technical Information
TrenchMV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTN200N10T
V_DSS = 100V
I_D25 = 200A
R_DS(on) ≤ 5.5mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I_ISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Maximum Ratings
100
V
100
V
±20
V
± 30
V
200
A
100
A
500
A
40
A
1.5
J
550
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 50A, Note 1
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
±200 nA
5 μA
250 μA
5.5 mΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z _{International standard package}
z _{miniBLOC, with Aluminium nitride}
isolation
z _{Avalanche Rated}
z _{Low RDS(ON) and QG}
z _{Low package inductance}
z _{Fast intrinsic Rectifier}
Advantages
• Low gate charge drive requirement
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99678A(09/08)