IXTN120N25 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Current MegaMOS FET

High Current
MegaMOS^TMFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 120N25
V_DSS =
I_D25
=
= R_DS(on)
250 V
120 A
20 mΩ
Symbol Test conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1.0 MΩ
Continuous
Transient
T_C = 25°C MOSFET chip capability
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250
V
250
V
±20
V
±30
V
120
A
75
A
480
A
90
A
80
mJ
4.0
J
10
V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
730
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 1 mA
V_GS(th)
V_DS = V_GS, I_D = 250 µA
I_GSS
V_GS = ±20 V DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
VPu_{GSlse=te1s0t,Vt,≤}I_{D3=000.m5 sID,2d5 uty cycle d ≤ 2%}
Characteristic Values
Min. Typ.
Max.
250
V
2.0
4.0 V
±200 nA
50 µA
3 mA
20 mΩ
Applications
• Motorcontrols
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98879D(11/03)