IXTM10N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – MegaMOS FET

MegaMOS^TMFET
IXTH / IXTM 10N100
IXTH / IXTM 12N100
V
DSS
1000 V
1000 V
I
D25
10 A
12 A
R
DS(on)
1.20 Ω
1.05 Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
P
D
T_J
T_JM
T_stg
M_d
Weight
T
C
= 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1000
V
1000
V
±20
V
±30
V
10N100
12N100
10N100
12N100
10
A
12
A
40
A
48
A
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Symbol
V_DSS
V
GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V = 10 V, I = 0.5 I
10N100
GS
D
D25
12N100
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
2
V
4.5 V
±100 nA
250 µA
1 mA
1.20 Ω
1.05 Ω
TO-247 AD (IXTH)
TO-204 AA (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
l _{International standard packages}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Low package inductance (< 5 nH)}
- easy to drive and to protect
l _{Fast switching times}
Applications
l _{Switch-mode and resonant-mode}
power supplies
l _{Motor controls}
l _{Uninterruptible Power Supplies (UPS)}
l _{DC choppers}
Advantages
l _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
l _{Space savings}
l _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91540E(5/96)
1-4