IXTK74N20 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Current MegaMOSFET

High Current
MegaMOS^TMFET
N-Channel Enhancement Mode
IXTK 74 N20
IXTH 68 N20
V_DSS
200 V
200 V
I_D25
74 A
68 A
R_DS(on)
35 mW
35 mW
Preliminary data
Symbol Test conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1.0 MΩ
Continuous
Transient
T_C = 25°C
I_DM
T_C = 25°C, pulse width limited by T_JM
P_D
T_C = 25°C
T_J
T_JM
T_stg
M_d
Weight
Mounting torque
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum ratings
200
V
200
V
±20
V
±30
V
74N20
74
A
68N20
68
A
74N20 296
A
68N20 272
A
74N20 416
W
68N20 300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-264
10
g
TO-247
6
g
300
°C
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 5 mA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±20 V DC, V_DS = 0
I_DSS
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
200
V
2.0
4.0 V
±100 nA
500 µA
3 mA
35 mΩ
TO-247AD (IXTH)
TO-264 AA (IXTK)
D (TAB)
G
D
S
G = Gate
S = Source
D = Drain
Tab = Drain
D (TAB)
Features
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions and dimensions.
C2 - 14
95512C (12/97)
© 1998 IXYS All rights reserved