IXTK60N50L2 Datasheet, PDF (1/5 Pages) IXYS Corporation – LinearL2 Power MOSFET w/Extended FBSOA

Preliminary Technical Information
LinearL2^TM Power
MOSFET w/Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
IXTK60N50L2
IXTX60N50L2
V_DSS
I_D25
R_DS(on)
= 500V
= 60A
< 100mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
Maximum Ratings
500
V
500
V
±30
V
±40
V
60
A
150
A
60
A
3
J
960
W
-55...+150
°C
150
°C
-55...+150
°C
300
°C
260
°C
1.13/10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25 , Note 1
Characteristic Values
Min. Typ. Max.
500
V
2.5
4.5 V
±200 nA
50 μA
5 mA
100 mΩ
TO-264
G
D
S
PLUS247
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{Designed for linear operation}
z _{International standard packages}
z _{Avalanche rated}
z _{Guaranteed FBSOA at 75°C}
Advantages
• Easy to mount
• Space savings
• High power density
Applications
z _{Solid state circuit breakers}
z _{Soft start controls}
z _{Linear amplifiers}
z _{Programmable loads}
z _{Current regulators}
© 2008 IXYS CORPORATION, All rights reserved
DS100087(12/08)