IXTK33N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Current MegaMOSFET

High Current
MegaMOS^TMFET
N-Channel Enhancement Mode
IXTK 33N50
V_DSS = 500 V
I_{D (cont)} = 33 A
R_DS(on) = 0.17 Ω
Preliminary data
Symbol Test conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1.0 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
P_D
T_C = 25°C
T
J
T_JM
T
stg
Md
Mounting torque
Weight
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V
DSS
V = 0 V, I = 5 mA
GS
D
BV_DSS temperature coefficient
V
GS(th)
V
DS
=
V_GS,
I
D
=
250
µA
V temperature coefficient
GS(th)
I_GSS
V_GS = ±20 V DC, V_DS = 0
I
V = 0.8 V
DSS
DS
DSS
V_GS = 0 V
T = 25°C
J
T_J = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
Maximum ratings
500
V
500
V
±20
V
±30
V
33
A
132
A
416
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
10
g
300
°C
Characteristic Values
Min. Typ. Max.
500
V
0.087
%/K
2.0
4.0 V
-0.25
%/K
±100 nA
200 µA
3 mA
0.17 Ω
TO-264 AA
G
D
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell
structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies
(UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95513C (4/97)
1-4