IXTK21N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage MegaMOSTMFETs

High Voltage
MegaMOS^TMFETs
IXTK 21N100
IXTN 21N100
V_DSS = 1000 V
I_D25 = 21 A
R_DS(on) = 0.55 Ω
N-Channel, Enhancement Mode
TO-264 AA (IXTK)
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
P
D
T_J
T_JM
T_stg
T_L
V
ISOL
M
d
Weight
Symbol
V_DSS
V_GH(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXTK
IXTN
1000
1000
V
1000
1000
V
±20
±20
V
±30
±30
V
21
21
A
84
84
A
500
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
-
°C
-
2500
V~
-
3000
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10
30
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 6 mA
V_DS = V_GS, I_D = 500 µA
V
GS
=
±20
V,
DC
V
DS
=
0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
2
V
4.5 V
±200 nA
500 µA
2 mA
0.55 Ω
G
D
S
D (TAB)
miniBLOC, SOT-227 B
E153432
S
D
G
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l _{International standard packages}
l _{JEDECTO-264,epoxymeetUL94V-0}
flammability classification
l _{miniBLOC,(ISOTOP-compatible) with}
Aluminium nitride isolation
l _{Low RDS (on) HDMOS}^TM _process
l _{Rugged polysilicon gate cell structure}
l _{Low package inductance}
Applications
l _{DC-DC converters}
l _{Synchronous rectification}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{Temperature and lighting controls}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92808I(5/97)
1-4