IXTK200N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHTTM Power MOSFET

Advanced Technical Information
PolarHT^TM
Power MOSFET
IXTK 200N10P
N-Channel Enhancement Mode
V_DSS =
I_D25 =
= R_DS(on)
100 V
200 A
7.5 mΩ
Symbol
Test Conditions
Maximum Ratings ^{TO-264(SP) (IXTK)}
V_DSS
V_DGR
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
100
V
100
V
±20
V
200
A
75
A
400
A
60
A
100
mJ
4
J
10
V/ns
800
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
10
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 500µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V_GS = 15 V, I_D = 400A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
7.5 mΩ
5.5
mΩ
G _DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
PolarHT^TM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99186(05/04)