IXTK200N10L2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Linear L2 Power MOSFET w/ Extended FBSOA

Advance Technical Information
Linear L2^TM Power
MOSFET w/ Extended
FBSOA
IXTK200N10L2
IXTX200N10L2
V_DSS
I_D25
R_DS(on)
= 100V
= 200A
< 11mΩ
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
TO-264 (IXTK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
Lead Current Limit, (RMS)
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.063 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
Maximum Ratings
100
V
100
V
±20
V
±30
V
200
A
160
A
500
A
100
A
5
J
1040
W
-55...+150
°C
150
°C
-55...+150
°C
300
°C
260
°C
1.13/10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 3mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
100
V
2.0
4.5 V
±200 nA
10 μA
250 μA
11 mΩ
G
D
S
Tab
PLUS247(IXTX)
G
D
S
Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{Designed for Linear Operation}
z _{Avalanche Rated}
z _{Guaranteed FBSOA at 75°C}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Solid State Circuit Breakers}
z _{Soft Start Controls}
z _{Linear Amplifiers}
z _{Programmable Loads}
z _{Current Regulators}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100239(2/10)