IXTK180N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHTTM Power MOSFET N-Channel Enhancement Mode

PolarHT^TM
Power MOSFET
IXTK 180N15P
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
150 V
180 A
10 m Ω
Symbol
Test Conditions
Maximum Ratings TO-264 (IXTK)
V_DSS
V_DGR
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
100
V
100
V
V_DSS
V_GSM
Continuous
Transient
±20
V
±30
V
I
D25
I_D(RMS)
I_DM
I_AR
E
AR
E_AS
T
C
= 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
180
A
75
A
380
A
60
A
100
mJ
4
J
dv/dt
P_D
T_J
T
JM
T_stg
I
S
≤
I,
DM
di/dt
≤ 100
A/µs,
V
DD
≤
V,
DSS
T
J
≤150° C,
R
G
=
4
Ω
T_C = 25° C
10
V/ns
800
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
T_L
T_SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
M_d
Mounting torque
Weight
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
300
°C
260
°C
1.13/10 Nm/lb.in.
10
g
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 500µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
10 m Ω
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2005 IXYS All rights reserved
DS99297E(12/05)