IXTK128N15 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Current Mega MOS FET

Advance Technical Information
High Current
Mega MOS^TMFET
N-Channel Enhancement Mode
IXTK 128N15
V_DSS
I_D25
R_DS(on)
= 150 V
= 128 A
= 15 mΩ
Symbol
V
DSS
V_DGR
V
GS
V
GSM
I_D25
I
D(RMS)
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C MOSFET chip capability
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-264
Maximum Ratings
150
V
150
V
±20
V
±30
V
128
A
75
A
512
A
90
A
60
mJ
2.5
J
5
V/ns
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.7/6 Nm/lb.in.
10
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 1 mA
V_GS(th)
V_DS = V_GS, I_D = 250 µA
I
GSS
V
GS
= ±20 V
DC, V = 0
DS
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
150
V
2.0
4.0 V
±100 nA
50 µA
2 mA
15 mΩ
TO-264 AA (IXTK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard package
Low R_{DS (on)} HDMOS^TM process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Motor controls
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2003 IXYS All rights reserved
DS98952(03/03)