IXTK120N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

PolarHT^TM
Power MOSFET
IXTK 120N20P
IXTQ 120N20P
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
200 V
120 A
22 m Ω
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
200
V
200
V
V_GS
V_GSM
Continuous
Transient
±20
V
±30
V
I_D25
I_D(RMS)
I_DM
I
AR
E_AR
E
AS
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T
C
= 25° C
120
A
75
A
300
A
60
A
60
mJ
2.0
J
dv/dt
P_D
T_J
T_JM
T_stg
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤175° C, R_G = 4 Ω
T_C = 25° C
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
T_L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
M_d
Mounting torque
Weight
TO-3P
TO-264
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
10
g
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175° C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
22 m Ω
G
D
S
TO-3P (IXTQ)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99207E(10/05)