IXTJ6N150 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage Power MOSFET

High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTJ6N150
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1500
V
1500
V
±30
V
±40
V
3
A
24
A
3
A
500
mJ
5
V/ns
125
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in
2500
V~
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 3A, Note 1
Characteristic Values
Min. Typ. Max.
1500
V
3.0
5.0 V
±100 nA
25 μA
250 μA
3.85 Ω
V_DSS =
I_D25 =
R_DS(on) ≤
1500V
3A
3.85Ω
ISO TO-247^TM
E153432
G
DS
Isolated Tab
G = Gate
D = Drain
S = Source
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V~ Electrical Isolation}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Molding Epoxies meet UL 94 V-0}
Flammability Classification
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge Applications}
z _{Pulse Circuits}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100448A(6/13)