IXTI10N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 10N60P
IXTI 10N60P
IXTP 10N60P
V = 600 V
DSS
I_D25 = 10 A
R_DS(on) ≤ 740 mΩ
Symbol
Test Conditions
Maximum Ratings _{TO-263 (IXTA)}
V_DSS
V
DGR
V_GS
I
D25
I_DM
I_AR
E
AR
E_AS
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Continuous Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
600
V
600
V
±30
V
G
S
10
A
(TAB)
30
A
Leaded TO-263 (IXTI)
10
A
20
mJ
500
mJ
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 10 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
Mounting force
(Leaded TO-263)
TO-220
TO-263 types
10
200
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
G
D
S
TO-220 (IXTP)
(TAB)
300
°C
260
°C
1.13/10 Nm/lb.in.
10..65 / 2.5..15
N/lb.
4
g
3
g
G _DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 100µA
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
5 µA
50 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
740 m Ω
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99330E(03/06)