IXTH96N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Engancement Mode

PolarHT^TM
Power MOSFET
N-Channel Enhancement Mode
IXTH 96N20P
IXTQ 96N20P
IXTT 96N20P
V_DSS
I_D25
R_DS(on)
= 200 V
= 96 A
= 24 mΩ
Symbol
Test Conditions
TO-247 (IXTH)
Maximum Ratings
V_DSS
V_DGR
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P, TO-247)
TO-3P
TO-247
TO-268
200
V
200
V
±20
V
GDS
96
A
75
A
225
A ^{TO-3P (IXTQ)}
60
A
50
mJ
1.5
J
10
V/ns
G
DS
(TAB)
(TAB)
600
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
5.5
g
6.0
g
5.0
g
TO-268 (IXTT)
GS
G = Gate
S = Source
D = Drain
TAB = Drain
Features
D (TAB)
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
24 mΩ
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99117D(01/05)