IXTH80N20L Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

Advance Technical Information
Linear^TM
Power MOSFET
w/ Extended FBSOA
IXTT80N20L
IXTH80N20L
V_DSS = 200V
I_D25 = 80A
≤ R_DS(on) 32mΩ
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
200
V
200
V
±20
V
±30
V
80
A
340
A
80
A
2.5
J
520
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4
g
6
g
Symbol Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
200
V
2.0
4.0 V
±100 nA
25 μA
250 μA
32 mΩ
TO-268 (IXTT)
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{Designed for Linear Operation}
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Guaranteed FBSOA at 75°C}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Solid State Circuit Breakers}
z _{Soft Start Controls}
z _{Linear Amplifiers}
z _{Programmable Loads}
z _{Current Regulators}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100294(11/10)