IXTH7P50 Datasheet, PDF (1/2 Pages) IXYS Corporation – Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 7P50
IXTH 8P50
V IR
DSS D25 DS(on)
-500V -7 A 1.5 Ω
-500V -8 A 1.2 Ω
Symbol
V
DSS
V
DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E_AR
P_D
T
J
T
JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_J
T_C = 25°C
T_C = 25°C
T_C = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
-500
V
-500
V
±20
V
±30
V
7P50
-7
A
8P50
-8
A
7P50
-28
A
8P50
-32
A
7P50
-7
A
8P50
-8
A
30
mJ
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
V
DSS
V
GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = -250 µA
BV_DSS Temperature Coefficient
V_DS = V_GS, I_D = -250 µA
V_GS(th) Temperature Coefficient
-500
V
0.054
%/K
-3.0
-5.0 V
-0.122
%/K
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
-200 µA
-1 mA
V_GS = -10 V, I_D = 0.5 I_D25
7P50
8P50
R_DS(on) Temperature Coefficient
1.5 Ω
1.2 Ω
0.6 %/K
Applications
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2001 IXYS All rights reserved
94534E (6/01)