IXTH6N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage Power MOSFET

High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
IXTH 6N120
IXTT 6N120
V_DSS
I_D25
R_DS(on)
= 1200 V
= 6A
= 2.6 Ω
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
6
A
24
A
6
A
25
mJ
500
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z _{International standard packages}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
1200
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.6 Ω
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99024B(01/04)