IXTH67N10 Datasheet, PDF (1/4 Pages) IXYS Corporation – MegaMOSFET

MegaMOS^TMFET
IXTH / IXTM 67N10
IXTH / IXTM 75N10
N-Channel Enhancement Mode
V
DSS
100 V
100 V
I
D25
67 A
75 A
R
DS(on)
25 mΩ
20 mΩ
Symbol
Test Conditions
Maximum Ratings
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
P
D
T_J
T_JM
T_stg
M_d
Weight
T
C
= 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
100
V
100
V
±20
V
±30
V
67N10
75N10
67N10
75N10
67
A
75
A
268
A
300
A
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Symbol
V_DSS
V_GS(th)
I
GSS
I
DSS
R_DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
100
V_DS = V_GS, I_D = 250 µA
2
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS
DSS
V_GS = 0 V
T
J
=
25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
67N10
75N10
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4V
±100 nA
200 µA
1 mA
0.025 Ω
0.020 Ω
TO-247 AD (IXTH)
TO-204 AE (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
l _{International standard packages}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Low package inductance (< 5 nH)}
- easy to drive and to protect
l _{Fast switching times}
Applications
l _{Switch-mode and resonant-mode}
power supplies
l _{Motor controls}
l _{UninterruptiblePower Supplies (UPS)}
l _{DC choppers}
Advantages
l _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
l _{Space savings}
l _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91533E(5/96)
1-4