IXTH60N25 Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode

Advance Technical Information
Standard
Power MOSFET
N-Channel Enhancement Mode
IXTH 60N25
IXTT 60N25
V_DSS =
I_D(cont) =
= R_DS(on)
250 V
60 A
46 mΩ
Symbol Test conditions
V_DSS
V_DGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1.0 MΩ
V_GS
V_GSM
Continuous
Transient
I
D25
T
C
= 25°C
MOSFET chip capability
I_DM
T_C = 25°C, pulse width limited by T_JM
I
AR
E_AR
E_AS
dv/dt
P_D
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
T_J
T_JM
T
stg
M_d
Mounting torque
(TO-247)
Weight
(TO-247)
(TO-268)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V_DSS
V_GS(th)
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
I_GSS
V_GS = ±20 V DC, V_DS = 0
I_DSS
V_DS = V_DSS
V =0V
GS
T = 125°C
J
R
DS(on)
V = 10 V, I = 15A
GS
D
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2003 IXYS All rights reserved
Maximum ratings
250
V
250
V
±20
V
±30
V
60
A
240
A
60
A
50
mJ
1.5
J
5
V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
4
g
300
°C
Characteristic Values
Min. Typ.
Max.
250
V
2.0
4.0 V
±100 nA
25 µA
250 µA
46 mΩ
TO-247 AD (IXTH)
G
D_S
TO-268 (IXTT)
D (TAB)
GS
C (TAB)
G = Gate
S = Source
Features
D = Drain
Tab = Drain
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•International standard package
JEDEC TO-247 AD
•Fast switching times
•High commutating dv/dt rating
Applications
• Motor controls
• DC choppers
• Switched-mode and resonant-mode
power supplies
•Uninterruptible Power Supplies (UPS)
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
DS99010A(05/03)