IXTH50N30 Datasheet, PDF (1/4 Pages) IXYS Corporation – Advance Technical Information High Current Power MOSFET

Advance Technical Information
High Current
Power MOSFET
N-Channel Enhancement Mode
IXTH 50N30
IXTT 50N30
V_DSS
I_D25
R_DS(on)
= 300 V
= 50 A
= 65 mΩ
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
300
V
300
V
±20
V
±30
V
50
A
200
A
50
A
50
mJ
1.5
J
5
V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 250µA
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
300
V
2.0
4.0 V
±100 nA
25 µA
250 µA
65 mΩ
TO-247 (IXTH)
(TAB)
TO-268 (IXTT)
GS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99011A(08/03)