IXTH36N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 36N50P
IXTQ 36N50P
IXTT 36N50P
IXTV 36N50P
IXTV 36N50PS
V_DSS =
I_D25 =
≤ R_DS(on)
500
36
170
V
A
mΩ
TO-3P (IXTQ)
Symbol
V
DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 3 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque(TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220
TO-3P
Maximum Ratings
500
V
500
V
G
DS
±30
V
±40
V _{TO-247 (IXTH)}
36
A
108
A
36
A
50
mJ
1.5
J
10
V/ns ^{TO-268 (IXTT)}
(TAB)
(TAB)
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
G
S
300
°C _{PLUS220 (IXTV)}
260
°C
1.13/10 Nm/lb.in.
20..120/4.5..15
6
5
2
5.5
N/lb
G
g
DS
g
g _{PLUS220 SMD(IXTV..S)}
g
D (TAB)
D (TAB)
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
I_GSS
I
DSS
R_DS(on)
V_GS = ±30 V_DC, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
T_J = 125° C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
±100 nA
25 µA
250 µA
170 mΩ
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
© 2006 IXYS All rights reserved
DS99228E(01/06)