IXTH32P20T Datasheet, PDF (1/7 Pages) IXYS Corporation – P-Channel Enhancement Mode

Preliminary Technical Information
TrenchP^TM
Power MOSFET
IXTA32P20T
IXTP32P20T
P-Channel Enhancement Mode
Avalanche Rated
IXTQ32P20T
IXTH32P20T
TO-263 AA (IXTA)
TO-220AB (IXTP)
V_DSS =
I_D25 =
≤ R_DS(on)
- 200V
- 32A
130mΩ
TO-3P (IXTQ)
G
S
D (Tab)
GD _S
D (Tab)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
M_d
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
- 200
V
- 200
V
+ 15
V
+ 25
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
- 32
A
- 96
A
T_C = 25°C
T_C = 25°C
- 32
A
1
J
T_C = 25°C
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300
°C
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10
N/lb.
Nm/lb.in.
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ± 15V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.0
- 4.0 V
±100 nA
- 25 μA
-1.25 mA
130 mΩ
G
D
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Extended FBSOA}
z _{Fast Intrinsic Diode}
z _{Low RDS(ON) and QG}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
z _{Battery Charger Applications}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100288A(11/10)