IXTH30N60P Datasheet, PDF (1/6 Pages) IXYS Corporation – PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
V_DSS = 600 V
I_D25 = 30 A
R_DS(on) ≤ 240 m Ω
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M
d
F_C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T
C
=
25°
C,
pulse
width
limited
by
T
JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I
S
≤
I,
DM
di/dt
≤ 100
A/µs,
V
DD
≤
V,
DSS
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
(TO-3P, TO-247)
(PLUS220)
TO-247
TO-3P
PLUS220
TO-268
Maximum Ratings
600
V ^{TO-247 (IXTH)}
600
V
±30
V
±40
V
30
A
G
DS
80
A _{TO-3P (IXTQ)}
30
A
50
mJ
1.5
J
10
V/ns
G
D
S
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb.
TO-268 (IXTT)
G
S
PLUS220 (IXTV)
6.0
g
5.5
g
4.0
g
G
D
S
5.0
g
PLUS220 (IXTV...S)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
600
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250µA
3.0
5.0 V
I_GSS
V_GS = ±30 V, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
240 m Ω
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{Fast Recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{International standard packages}
l _{Low package inductance}
- easy to drive and to protect
© 2006 IXYS All rights reserved
DS99251E(12/05)