IXTH30N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 30N50P
IXTQ 30N50P
IXTT 30N50P
IXTV 30N50P
IXTV 30N50PS
V=
DSS
I_D25 =
≤ R_DS(on)
500
30
200
V
A
mΩ
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
(TAB)
V_DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M
d
F_C
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 5 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220, PLUS220SMD)
PLUS220, PLUS220SMD
TO-268
TO-3P
TO-247
500
V
500
V
±30
V
±40
V
30
A
75
A
30
A
40
mJ
1.2
J
10
V/ns
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11 65/2.5 15 N/lb.
4
g
5
g
5.5
g
6
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
500
V_GS(th)
V_DS = V_GS, I_D = 250 µA
3.0
I_GSS
V_GS = ±30 V, V_DS = 0 V
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125° C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
165
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
V
5.0
V
±100 nA
25 µA
250 µA
200 m Ω
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
G
S
PLUS220 (IXTV)
(TAB)
(TAB)
GDS
(TAB)
PLUS220 SMD(IXTV..S)
G = Gate
S = Source
G
S
(TAB)
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99415E(04/06)