IXTH30N50L2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode

Linear L2^TM Power
MOSFET with extended
FBSOA
N-Channel Enhancement Mode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.063in) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-3P
TO-268
IXTH30N50L2
IXTQ30N50L2
IXTT30N50L2
D
O DD
R_Gi
G O ww
O
S
Maximum Ratings
500
V
500
V
±20
V
±30
V
30
A
60
A
30
A
50
mJ
1.5
J
400
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6.0
g
5.5
g
5.0
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV
DSS
V_GS(th)
V
GS
=
0V,
I
D
=
250μA
V_DS = V_GS, I_D = 250μA
I
GSS
V
GS
=
±30V,
V
DS
=
0V
I
DSS
V =V
DS
DSS
V = 0V
GS
T
J
= 125°C
R
DS(on)
V
GS
=
10V,
I
D
=
0.5
•
I , Note 1
D25
Characteristic Values
Min.
500
2.5
Typ.
Max.
V
4.5 V
±100 nA
50 μA
300 μA
200 mΩ
V_DSS = 500V
I_D25 = 30A
≤ R_DS(on) 200mΩ
TO-247 (IXTH)
TO-3P (IXTQ)
(TAB)
G
D
S
TO-268 (IXTT)
(TAB)
G
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z _{Designed for linear operation}
z _{International standard packages}
z _{Unclamped Inductive Switching}
(UIS) rated.
z _{Molding epoxies meet UL 94 V-0}
flammability classification
z _{Integrated gate resistor for easy}
paralleling
z _{Guaranteed FBSOA at 75°C}
Applications
z _{Solid state circuit breakers}
z _{Soft start controls}
z _{Linear amplifiers}
z _{Programmable loads}
z _{Current regulators}
© 2008 IXYS CORPORATION, All rights reserved
DS99957A (04/08)