IXTH30N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – MegaMOS FET

MegaMOS^TMFET
N-Channel Enhancement Mode
IXTH 30N50
V_DSS = 500 V
I_{D (cont)} =
30 A
R_DS(on) = 0.17 Ω
Symbol
V
DSS
V _DGR
V
GS
V_GSM
I_D25
I
DM
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings TO-247 AD
500
V
500
V
±20
V
±30
V
30
A
120
A
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z _{International standard package}
JEDEC TO-247 AD
z _{Low R}
HDMOS^TM process
DS (on)
z _{Rugged polysilicon gate cell structure}
z _{Fast switching times}
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R _DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 5 mA
GS
D
BV_DSS temperature coefficient
V_DS = V_GS, I_D = 250 µA
V temperature coefficient
GS(th)
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
30N50
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500
V
.087
%/k
2
-0.25
4V
%/k
±100 nA
200 µA
3 mA
0.17 Ω
Applications
z _{Switch-mode and resonant-mode}
power supplies
z _{Motor controls}
z _{Uninterruptible Power Supplies (UPS)}
z _{DC choppers}
Advantages
z _{Easy to mount with 1 screw}
(TO-247)
(isolated mounting screw hole)
z _{Space savings}
z _{High power density}
© 2002 IXYS All rights reserved
94569-E (8/02)