IXTH30N25 Datasheet, PDF (1/2 Pages) IXYS Corporation – N-Channel Enhancement Mode

Advance Technical Information
Standard
Power MOSFET
N-Channel Enhancement Mode
IXTH 30N25
V_DSS =
I_{D (cont)} =
R_DS(on) =
250 V
30 A
75 mΩ
Symbol Test Conditions
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
250
V
250
V
±20
V
±30
V
30
A
120
A
30
A
30
mJ
1.0
J
5 V/ns
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Features
l _{International standard package}
JEDEC TO-247 AD
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{High commutating dv/dt rating}
l _{Fast switching times}
Symbol Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
V_GS = 10 V, I_D = 15 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250
2
55
V
4V
±100 nA
25 µA
250 µA
75 m Ω
Applications
l _{Switch-mode and resonant-mode}
power supplies
l _{Motor controls}
l _{Uninterruptible Power Supplies (UPS)}
l _{DC choppers}
Advantages
l _{Easy to mount with 1 screw}
(isolated mounting screw hole)
l _{Space savings}
l _{High power density}
© 2001 IXYS All rights reserved
98872 (12/01)