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IXTH20N50D Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage MOSFET
High Voltage
MOSFET
N-Channel, Depletion Mode
Preliminary Data Sheet
IXTH 20N50D
IXTT 20N50D
VDSS = 500 V
ID25
= 20 A
RDS(on) = 0.33 Ω
Symbol
VDSX
VDGX
VGS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TISOL
Md
Weight
Symbol
VDSX
VGS(off)
IGSS
IDSX(off)
RDS(on)
ID(on)
TO-247 (IXFH)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
500
V
500
V
± 30
V
± 40
V
G
DS
(TAB)
TC = 25°C
TC = 25°C; pulse width limited by TJM
TC = 25°C
20
50
400
-55 ... + 150
150
A TO-268 (IXTT)
A
W
°C
G
S
°C
D (TAB)
-55 ... + 150
1.6 mm (0.063 in) from case for 10 seconds
300
Plastic case for 10 seconds
300
°C G = Gate
°C S = Source
°C
D = Drain
TAB = Drain
Mounting torque
TO-247
TO-268
1.13/10
6
4
Nm/lb.in.
g
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = -10 V, ID = 250 mA
500
V
VDS = 25 V, ID = 250 mA
VGS = ± 30 VDC, VDS = 0
-1.5
-3.5 V
± 100 nA
VDS = VDSS
VGS = -10 V
VGS = 10 V, ID = 10 A
TJ = 25°C
TJ = 125°C
Note 1
25 μA
500 μA
0.33 Ω
Features
z Normally ON Mode
z International standard packages
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Level shifting
z Triggers
z Solid State Relays
z Current Regulators
z Active load
VGS = 0 V, VDS= 25 V Note 1
1.5
A
© 2006 IXYS All rights reserved
99192(01/06)