IXTH200N075T Datasheet, PDF (1/5 Pages) IXYS Corporation – Preliminary Technical Information Trench Gate Power MOSFET

Preliminary Technical Information
Trench Gate
Power MOSFET
IXTH200N075T
IXTQ200N075T
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
75
200
5.0
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 175°C, R_G = 5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
75
V
75
V
± 20
V
200
A
75
A
540
A
25
A
750
mJ
3
V/ns
430
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
5.5
g
6
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 250 μA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
R_DS(on)
V_GS = 10 V, I_D = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75
V
2.0
4.0 V
± 200 nA
5 μA
250 μA
4.0
5.0 mΩ
TO-247 (IXTH)
G
D
S
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS CORPORATION All rights reserved
DS99634 (11/06)