IXTH1N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage MOSFET

Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTH 1N100
IXTT 1N100
V
DSS
I_D25
R_DS(on)
= 1000 V
= 1.5 A
= 11 Ω
Symbol
Test Conditions
V
DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
M_d
Weight
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 18 Ω
T_C = 25°C
Mounting torque (TO-247)
TO-268
TO-247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
1.5
A
6
A
1.5
A
6
mJ
200
mJ
3
V/ns
60
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
4
g
6
g
300
°C
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 25 µA
1000
2.5
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 1.0A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
500 µA
11 Ω
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Ÿ International standard packages
Ÿ High voltage, Low R_{DS (on)} HDMOS^TM
process
Ÿ Rugged polysilicon gate cell structure
Ÿ Fast switching times
Applications
Ÿ Switch-mode and resonant-mode
power supplies
Ÿ Flyback inverters
Ÿ DC choppers
Ÿ High frequency matching
Advantages
Ÿ Space savings
Ÿ High power density
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98886 (1/2)