IXTH182N055T Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
TrenchMV^TM
Power MOSFET
IXTH182N055T
IXTQ182N055T
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
R_DS(on) ≤
55
182
5.0
V
A
mΩ
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Transient
T_C = 25° C
Lead Current Limit, RMS
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T_J ≤175° C, R_G = 5 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
55
V
55
V
± 20
V
182
A
75
A
490
A
25
A
1.0
J
3
V/ns
G
D
TO-3P (IXTQ)
S
G
D
S
(TAB)
(TAB)
360
-55 ... +175
175
-55 ... +175
W
G = Gate
D = Drain
S = Source TAB = Drain
°C
°C
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
5.5
g
6
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 250 µA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150° C
R_DS(on)
V_GS = 10 V, I_D =25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
55
V
2.0
4.0 V
± 200 nA
5 µA
250 µA
3.5
5.0 m Ω
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99682 (11/06)