IXTH16P60P Datasheet, PDF (1/5 Pages) IXYS Corporation – Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode

PolarP^TM
Power MOSFET
Preliminary Technical Information
IXTH16P60P
IXTT16P60P
V_DSS =
I_D25 =
≤ R_DS(on)
- 600V
- 16A
720mΩ
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247)
TO-268
TO-247
Maximum Ratings
- 600
V
- 600
V
±20
V
±30
V
- 16
A
- 48
A
- 16
A
2.5
J
10
V/ns
460
W
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
5
6
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
- 600
V
- 2.5
- 4.5 V
±100 nA
- 25 μA
- 200 μA
720 mΩ
TO-268 (IXTT)
G
S
TO-247 (IXTH)
D (TAB)
G
D
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features:
z _{International standard packages}
z _{Avalanche Rated}
z _{Rugged PolarP}TM _process
z _{Low package inductance}
- easy to drive and to protect
Applications:
z _{High side switching}
z _{Push-pull amplifiers}
z _{DC Choppers}
z _{Current regulators}
z _{Automatic test equipment}
Advantages:
z _{Low gate charge results in simple}
drive requirement
z _{High power density}
z _{Fast switching}
z _{Easy to parallel}
© 2008 IXYS CORPORATION, All rights reserved
DS99988(5/08)