IXTH16N10D2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Depletion Mode MOSFET

Depletion Mode
MOSFET
N-Channel
IXTH16N10D2
IXTT16N10D2
V_DSX =
I_D(on) >
≤ R_DS(on)
100V
16A
64mΩ
TO-247 (IXTH)
Symbol
V_DSX
V_DGX
V_GSX
V_GSM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
100
V
100
V
±20
V
±30
V
830
W
- 55 ... +175
°C
175
°C
- 55 ... +175
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSX
V_GS = - 5V, I_D = 250μA
V_GS(off)
V_DS = 25V, I_D = 4mA
I_GSX
V_GS = ±20V, V_DS = 0V
I_DSX(off)
V_DS = V_DSX, V_GS = - 5V
R_DS(on)
I_D(on)
V_GS = 0V, I_D = 8A, Note 1
V_GS = 0V, V_DS = 25V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
100
V
- 2.0
- 4.0 V
±100 nA
5 μA
250 μA
64 mΩ
16
A
G
DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2012 IXYS CORPORATION, All Rights Reserved
DS100258B(08/12)