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IXTH14N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – MegaMOSTMFET
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N100
VDSS
ID25
RDS(on)
= 1000 V
= 14 A
= 0.82 Ω
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
M
d
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
14
A
56
A
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l International standard package
JEDEC TO-247 AD
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Fast switching times
Symbol
VDSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
V = 0.8 • V
DS
DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
2
V
4.5 V
±100 nA
500 µA
3 mA
0.70 0.82 Ω
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92782E (3/98)
1-2