IXTH13N110 Datasheet, PDF (1/2 Pages) IXYS Corporation – MEGA MOS FET

MegaMOS^TMFET
N-Channel Enhancement Mode
IXTH 13N110
V_DSS
I_D25
R_DS(on)
= 1100 V
= 13 A
= 0.92 Ω
Symbol
Test Conditions
V_DSS
V_DGR
V
GS
V_GSM
I
D25
I_DM
P_D
T
J
T_JM
T
stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1100
V
1100
V
±20
V
±30
V
13
A
52
A
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l _{International standard package}
JEDEC TO-247 AD
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Fast switching times}
Symbol
V_DSS
V
GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1100
2
V
4.5 V
±100 nA
500 µA
3 mA
0.80 0.92 Ω
Applications
l _{Switch-mode and resonant-mode}
power supplies
l _{Motor controls}
l _{Uninterruptible Power Supplies (UPS)}
l _{DC choppers}
Advantages
l _{Easy to mount with 1 screw}
(isolated mounting screw hole)
l _{Space savings}
l _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92781F (3/98)
1-2