IXTH130N20T Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
TrenchHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH130N20T
V=
DSS
I_D25 =
R_DS(on) ≤
200V
130A
16mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dv/dt
P_d
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
Maximum Ratings
200
V
200
V
± 30
V
130
A
75
A
320
A
4
A
1.0
J
10
V/ns
830
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in
6
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 1mA
2.5
5.0 V
I_GSS
V_GS = ± 20V, V_DS = 0V
± 200 nA
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
25 μA
500 μA
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1
16 mΩ
TO-247
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{175 °C Operating Temperature}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High Power density}
Applications
z _{DC-DC converters}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor control}
z _{High speed power switching}
applications
z _{DC choppers}
z _{Battery chargers}
© 2007 IXYS CORPORATION, All rights reserved
DS99846(06/07)