IXTH130N15T Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

Preliminary Technical Information
TrenchHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH130N15T
IXTQ130N15T
V=
DSS
I_D25 =
R_DS(on) ≤
150
130
12
V
A
mΩ
TO-247 (IXTH)
Symbol
V_DSS
V
DGR
V
GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/ms, V_DD ≤ V_DSS
T_J ≤ 175°C, R_G = 2.5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
150
V
150
V
± 30
V
130
A
75
A
330
A
5
A
1.2
J
3
V/ns
G
D
S
TO-3P (IXTQ)
G
D
S
(TAB)
(TAB)
750
-55 ... +175
175
-55 ... +175
W
G = Gate
S = Source
D = Drain
TAB = Drain
°C
°C
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
5.5
g
6
g
Features
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{175 °C Operating Temperature}
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 1 mA
2.5
4.5 V
I_GSS
V_GS = ± 20 V, V_DS = 0 V
± 200 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 150°C
5 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Notes 1, 2
10
12 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2007 IXYS CORPORATION, All rights reserved
DS99796 (02/07)