IXTH130N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

TrenchMV^TM
Power MOSFET
IXTH130N10T
IXTQ130N10T
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
100V
130A
9.1mΩ
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-3P)
TO-247
TO-3P
Maximum Ratings
100
V
100
V
± 20
V
130
A
75
A
300
A
65
A
500
mJ
360
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
6.0
g
5.5
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 25A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
±200 nA
5 μA
250 μA
9.1 mΩ
G
D
S
TO-3P (IXTQ)
(TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{Ultra-low On Resistance}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{175 °C Operating Temperature}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
z _{DC/DC Converters and Off-line UPS}
z _{Primary- Side Switch}
z _{High Current Switching}
Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99708A(07/08)