IXTH12N50A Datasheet, PDF (1/4 Pages) IXYS Corporation – Standard Power MOSFET

Standard
Power MOSFET
N-Channel Enhancement Mode
IXTH 12 N50A
IXTM 12 N50A
V_DSS
500 V
500 V
I_D25
12 A
12 A
R_DS(on)
0.4 Ω
0.4 Ω
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
P
D
T_J
T
JM
T_stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
500
V
500
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
12
A
48
A
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
q _{International standard packages}
q _{Low R}
HDMOS^TM process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{Low package inductance (< 5 nH)}
- easy to drive and to protect
q _{Fast switching times}
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
500
V_DS = V_GS, I_D = 250 µA
2
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4V
±100 nA
200 µA
1 mA
0.40 Ω
Applications
q _{Switch-mode and resonant-mode}
power supplies
q _{Motor controls}
q _{Uninterruptible Power Supplies (UPS)}
q _{DC choppers}
Advantages
q _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]
91541E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone] Fax: [phone]