IXTH12N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – Power MOSFET, Avalanche Rated High Voltage

Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
IXTH 12N120
V_DSS = 1200 V
I_{D (cont)} = 12 A
R_DS(on)=
1.4 Ω
Symbol Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
P_D
T_J
T_JM
T_stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
TT_CC
= 25°C
= 25°C
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
12
A
48
A
12
A
30
mJ
1.0
J
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z _{International standard package}
JEDEC TO-247 AD
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Fast switching times}
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
1200
3
V_GS = ±30 V_DC, V_DS = 0
VV_GDSS
=
=
0V^DV^SS
TT_JJ
=
=
25°C
125°C
PV^Gu^Slse=
10 V,
test, t
I_D
≤
3=000.5µ^•s,IDd²⁵uty
cycle
d
≤
2
%
V
5V
±100 nA
25 µA
3 mA
1.4 Ω
Applications
z _{Switch-mode and resonant-mode}
power supplies
z _{Motor controls}
z _{Uninterruptible Power Supplies (UPS)}
z _{DC choppers}
Advantages
z _{Easy to mount with 1 screw}
(isolated mounting screw hole)
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS98937E(04/04)