IXTH11P50 Datasheet, PDF (1/4 Pages) IXYS Corporation – Standard Power MOSFET

Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 11P50
IXTT 11P50
V_DSS =
I_D25 =
= R_DS(on)
-500 V
-11 A
0.75 Ω
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_J
T_C = 25°C
T_C = 25°C
T_C = 25°C
Maximum Ratings
-500
V
-500
V
±20
V
±30
V
-11
A
-44
A
-11
A
30
mJ
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
TO-247 AD (IXTH)
D
TO-268 (IXTT) Case Style
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
(TAB)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247 AD
TO-268
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Features
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
BVV^GSDS=_S T0eVm,pI^Der=at-u2r5e0C^µoAefficient
V_DS = V_GS, I_D = -250 µA
V_GS(th) Temperature Coefficient
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = -10 V, I_D = 0.5 • I_D25
R_DS(on) Temperature Coefficient
-500
0.054
-3.0
-5.0
-0.122
±100
-200
-1
0.75
0.6
V
%/K
V
%/K
nA
µA
mA
Ω
%/K
z _{International standard packages}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
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DS94535J(01/05)