IXTH11N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – MegaMOSFET

MegaMOS^TMFET
N-Channel Enhancement Mode
V_DSS
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
I_D25
11 A
13 A
R_DS(on)
0.95 Ω
0.80 Ω
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
11N80
13N80
11N80
13N80
800
V
800
V
±20
V
±30
V
11
A
13
A
44
A
52
A
P_D
T_J
T_JM
T_stg
M_d
Weight
T_C = 25°C
Mounting torque
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q _{International standard packages}
q _{Low R}
HDMOS^TM process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{Low package inductance (< 5 nH)}
- easy to drive and to protect
q _{Fast switching times}
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R _DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 3 mA
GS
D
V_DS = V_GS, I_D = 250 µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs,
800
2
11N80
13N80
V
4.5 V
±100 nA
250 µA
1 mA
0.95 Ω
0.80 Ω
Applications
q _{Switch-mode and resonant-mode}
power supplies
q _{Motor controls}
q _{Uninterruptible Power Supplies (UPS)}
q _{DC choppers}
Advantages
q _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]
915380F (5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone] Fax: [phone]